The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Jul. 15, 2010
Michael A. Smith, Boise, ID (US);
Sukesh Sandhu, Boise, ID (US);
Xianfeng Zhou, Meridian, ID (US);
Graham Wolstenholme, Boise, ID (US);
Michael A. Smith, Boise, ID (US);
Sukesh Sandhu, Boise, ID (US);
Xianfeng Zhou, Meridian, ID (US);
Graham Wolstenholme, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention includes methods of forming oxide structures under corners of transistor gate stacks and adjacent trenched isolation regions. Such methods can include exposure of a semiconductor material to steam and H, with the Hbeing present to a concentration of from about 2% to about 40%, by volume. An oxide structure formed under the bottom corner of a transistor gate stack can have a bottom surface with a topography that includes a step of at least about 50 Å, and an upper surface directly over the bottom surface and having a topography that is substantially planar. Methodology of the present invention can be utilized to form semiconductor constructions suitable for incorporation into highly integrated circuitry. The highly integrated circuitry can be incorporated into electronic systems, and can, for example, be utilized in processors and/or memory storage devices.