The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Jan. 29, 2010
Ping-chia Shih, Hsinchu, TW;
Yu-cheng Wang, Tainan, TW;
Chun-sung Huang, Changhua, TW;
Yuan-cheng Yang, Kaohsiung, TW;
Chung-che Huang, Tainan, TW;
Chin-fu Lin, Taichung, TW;
Ping-Chia Shih, Hsinchu, TW;
Yu-Cheng Wang, Tainan, TW;
Chun-Sung Huang, Changhua, TW;
Yuan-Cheng Yang, Kaohsiung, TW;
Chung-Che Huang, Tainan, TW;
Chin-Fu Lin, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
An exemplary method of etching an oxide layer and a nitride layer is provided. In particular, a substrate is provided. A surface of the substrate has an isolating structure projecting therefrom. A first oxide layer, a nitride layer and a second oxide layer are sequentially provided on the surface of the substrate, wherein the first oxide layer is uncovered on the isolating structure, the nitride layer is formed overlying the first oxide layer, and the second oxide layer is formed overlying the nitride layer. An isotropic etching process is performed by using an etching mask unmasking the isolating structure, and thereby removing the unmasked portion of the second oxide layer and the unmasked portion of the nitride layer and further exposing sidewalls of the isolating structure. The unmasked portion of the first oxide layer generally is partially removed due to over-etching.