The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Jan. 29, 2010
Gek Soon Chua, Singapore, SG;
Sia Kim Tan, Singapore, SG;
Qunying Lin, Singapore, SG;
Cho Jui Tay, Singapore, SG;
Chenggen Quan, Singapore, SG;
Gek Soon Chua, Singapore, SG;
Sia Kim Tan, Singapore, SG;
Qunying Lin, Singapore, SG;
Cho Jui Tay, Singapore, SG;
Chenggen Quan, Singapore, SG;
GLOBAL FOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A method for forming a semiconductor device is presented. The method includes providing a substrate having a photoresist thereon and transmitting a light source through a mask having a pattern onto the photoresist. The mask comprises a mask substrate having first, second and third regions, the third region is disposed between the first and second regions. The mask also includes a light reducing layer over the mask substrate having a first opening over the first region and a second opening over the second region. The first and second openings have layer sidewalls. The sidewalls of the light reducing layer are slanted at an angle less than 90 degrees from the plane of a top surface of the mask substrate. The method also includes developing the photoresist to transfer the pattern of the mask to the photoresist.