The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Oct. 07, 2009
Chen-hua Yu, Hsin-Chu, TW;
Shin-puu Jeng, Hsin-Chu, TW;
Shang-yun Hou, Hsin-Chu, TW;
Hao-yi Tsai, Hsin-Chu, TW;
Hsien Wei Chen, Sinying, TW;
Hsiu-ping Wei, Dajia Town, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Shin-Puu Jeng, Hsin-Chu, TW;
Shang-Yun Hou, Hsin-Chu, TW;
Hao-Yi Tsai, Hsin-Chu, TW;
Hsien Wei Chen, Sinying, TW;
Hsiu-Ping Wei, Dajia Town, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A structure includes a semiconductor substrate having semiconductor devices formed on or in the substrate. An interconnecting metallization structure is formed over and connected to the devices. The interconnecting metallization structure including at least one dielectric layer. A passivation layer is deposited over the interconnecting metallization structure and the dielectric layer. At least one metal contact pad and at least one dummy metal structure are provided in the passivation layer. The contact pad is conductively coupled to at least one of the devices. The dummy metal structure is spaced apart from the contact pad and unconnected to the contact pad and the devices.