The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Jan. 08, 2010
Leland Chang, Yorktown Heights, NY (US);
Brian L. Ji, Yorktown Heights, NY (US);
Arvind Kumar, Hopewell Junction, NY (US);
Amlan Majumdar, Yorktown Heights, NY (US);
Katherine Saenger, Yorktown Heights, NY (US);
Leathen Shi, Yorktown Heights, NY (US);
Jeng-bang Yau, Yorktown Heights, NY (US);
Leland Chang, Yorktown Heights, NY (US);
Brian L. Ji, Yorktown Heights, NY (US);
Arvind Kumar, Hopewell Junction, NY (US);
Amlan Majumdar, Yorktown Heights, NY (US);
Katherine Saenger, Yorktown Heights, NY (US);
Leathen Shi, Yorktown Heights, NY (US);
Jeng-Bang Yau, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A fully depleted semiconductor-on-insulator (FDSOI) transistor structure includes a back gate electrode having a limited thickness and aligned to a front gate electrode. The back gate electrode is formed in a first substrate by ion implantation of dopants through a first oxide cap layer. Global alignment markers are formed in the first substrate to enable alignment of the front gate electrode to the back gate electrode. The global alignment markers enable preparation of a virtually flat substrate on the first substrate so that the first substrate can be bonded to a second substrate in a reliable manner.