The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Jun. 19, 2008
Muneyuki Fukuda, Kokubunji, JP;
Hiromasa Yamanashi, Sagamihara, JP;
Sayaka Tanimoto, Kodaira, JP;
Yasunari Souda, Kawasaki, JP;
Osamu Nasu, Hitachinaka, JP;
Muneyuki Fukuda, Kokubunji, JP;
Hiromasa Yamanashi, Sagamihara, JP;
Sayaka Tanimoto, Kodaira, JP;
Yasunari Souda, Kawasaki, JP;
Osamu Nasu, Hitachinaka, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
Potentials at a plurality of points on a diameter of a semiconductor waferare measured actually. Then, a potential distribution on the diameter is obtained by spline interpolation of potentials between the actually-measured points adjacent in the diameter direction. Thereafter, a two-dimensional interpolation function regarding a potential distribution in the semiconductor waferis obtained by spline interpolation of potentials between points adjacent in the circumferential direction around the center of the semiconductor wafer. Then, a potential at a observation point on the semiconductor waferis obtained by substituting the coordinate value of this observation point into the two-dimensional interpolation function. As a result, a potential distribution due to electrification of the wafer can be estimated accurately, and the retarding potential can be set to a suitable value.