The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2011

Filed:

Sep. 08, 2010
Applicants:

Atsushi Ookouchi, Koshi, JP;

Taro Yamamoto, Koshi, JP;

Hirofumi Takeguchi, Koshi, JP;

Hideharu Kyouda, Koshi, JP;

Kousuke Yoshihara, Koshi, JP;

Inventors:

Atsushi Ookouchi, Koshi, JP;

Taro Yamamoto, Koshi, JP;

Hirofumi Takeguchi, Koshi, JP;

Hideharu Kyouda, Koshi, JP;

Kousuke Yoshihara, Koshi, JP;

Assignee:

Tokyo Electron Limited, Tokyo-To, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/26 (2006.01); G03F 7/30 (2006.01); B05C 5/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.


Find Patent Forward Citations

Loading…