The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2011

Filed:

Nov. 27, 2007
Applicants:

Yasushi Fukasawa, Tama, JP;

Mitsutoshi Shuto, Tama, JP;

Yasuaki Suzuki, Tama, JP;

Inventors:

Yasushi Fukasawa, Tama, JP;

Mitsutoshi Shuto, Tama, JP;

Yasuaki Suzuki, Tama, JP;

Assignee:

ASM Japan K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05H 1/30 (2006.01); H05H 1/32 (2006.01); H05H 1/24 (2006.01); C23C 16/00 (2006.01); C23C 14/02 (2006.01); B05D 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i), without unloading the substrate, applying amplitude-modulated RF power between the susceptor and the shower plate in the absence of a film-forming gas but in the presence of a non-film-forming gas to reduce a floating potential of the substrate.


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Fukasawa, Yasushi. (2011). Method of plasma treatment using amplitude-modulated rf power (U.S. Patent No. 8021723). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8021723

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