The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
May. 16, 2008
Hui-jung Wu, Fremont, CA (US);
Daniel R. Juliano, Santa Clara, CA (US);
Wen Wu, San Jose, CA (US);
Girish Dixit, San Jose, CA (US);
Hui-Jung Wu, Fremont, CA (US);
Daniel R. Juliano, Santa Clara, CA (US);
Wen Wu, San Jose, CA (US);
Girish Dixit, San Jose, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Improved methods of depositing copper seed layers in copper interconnect structure fabrication processes are provided. Also provided are the resulting structures, which have improved electromigration performance and reduced line resistance. According to various embodiments, the methods involve depositing a copper seed bilayer on a barrier layer in a recessed feature on a partially fabricated semiconductor substrate. The bilayer has a copper alloy seed layer and a pure copper seed layer, with the pure copper seed layer is deposited on the copper alloy seed layer. The copper seed bilayers have reduced line resistance increase and better electromigration performance than conventional doped copper seed layers. Precise line resistance control is achieved by tuning the bilayer thickness to meet the desired electromigration performance.