The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Nov. 19, 2004
Yasuo Kobayashi, Nirasaki, JP;
Kohei Kawamura, Nirasaki, JP;
Yasuo Kobayashi, Nirasaki, JP;
Kohei Kawamura, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A microwave is radiated into a processing chamber () from a planar antenna member of an antenna () through a dielectric plate (). With this, a CFgas supplied into the processing chamber () from a gas supply member () is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the CFgas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.