The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Feb. 20, 2009
Masaru Kidoh, Komae, JP;
Masaru Kito, Yokohama, JP;
Ryota Katsumata, Yokohama, JP;
Yoshiaki Fukuzumi, Yokohama, JP;
Hiroyasu Tanaka, Tokyo, JP;
Megumi Ishiduki, Yokohama, JP;
Yosuke Komori, Yokohama, JP;
Hideaki Aochi, Kawasaki, JP;
Akihiro Nitayama, Yokohama, JP;
Hitoshi Ito, Yokohama, JP;
Yasuyuki Matsuoka, Yokohama, JP;
Masaru Kidoh, Komae, JP;
Masaru Kito, Yokohama, JP;
Ryota Katsumata, Yokohama, JP;
Yoshiaki Fukuzumi, Yokohama, JP;
Hiroyasu Tanaka, Tokyo, JP;
Megumi Ishiduki, Yokohama, JP;
Yosuke Komori, Yokohama, JP;
Hideaki Aochi, Kawasaki, JP;
Akihiro Nitayama, Yokohama, JP;
Hitoshi Ito, Yokohama, JP;
Yasuyuki Matsuoka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor storage device has a plurality of memory strings in which a plurality of electrically rewritable memory cells are connected in series. The memory string has a columnar semiconductor layer extending in a direction perpendicular to a substrate; a conductive layer formed so as to sandwich a charge storing layer in cooperation with the columnar semiconductor layer; and a metal layer formed so as to be in contact with the top face of the conductive layer.