The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Dec. 23, 2008
Naomu Kitano, Machida, JP;
Yusuke Fukuchi, Yokohama, JP;
Nobumasa Suzuki, Yokohama, JP;
Hideo Kitagawa, Tottori, JP;
Naomu Kitano, Machida, JP;
Yusuke Fukuchi, Yokohama, JP;
Nobumasa Suzuki, Yokohama, JP;
Hideo Kitagawa, Tottori, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Canon Anelva Corporation, Kawasaki-shi, JP;
Abstract
A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile