The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Aug. 03, 2010
Ki-ha Hong, Yongin-si, KR;
Sung-hoon Lee, Yongin-si, KR;
Jae-woong Hyun, Yongin-si, KR;
Jai-kwang Shin, Yongin-si, KR;
Young-gu Jin, Yongin-si, KR;
Sung-il Park, Yongin-si, KR;
Jong-seob Kim, Yongin-si, KR;
Ki-ha Hong, Yongin-si, KR;
Sung-hoon Lee, Yongin-si, KR;
Jae-woong Hyun, Yongin-si, KR;
Jai-kwang Shin, Yongin-si, KR;
Young-gu Jin, Yongin-si, KR;
Sung-il Park, Yongin-si, KR;
Jong-seob Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.