The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Apr. 09, 2009
Applicants:
George Liu, Shin-chu, TW;
Kuei Shun Chen, Hsin-Chu, TW;
Chih-yang Yeh, Jhubei, TW;
Te-chih Huang, Chu-Bei, TW;
Inventors:
George Liu, Shin-chu, TW;
Kuei Shun Chen, Hsin-Chu, TW;
Chih-Yang Yeh, Jhubei, TW;
Te-Chih Huang, Chu-Bei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gradated photomask is provided. The photomask includes a first region including a first plurality of sub-resolution features and a second region including a second plurality of sub-resolution features. The first region blocks a first percentage of the incident radiation. The second region blocks a second percentage of the incident radiation. The first and second percentage are different. An intensity selective exposure method is also provided.