The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Aug. 15, 2008
Applicants:
Tien-fan Ou, Taipei, TW;
Wen-jer Tsai, Hualien County, TW;
Jyun-siang Huang, Chiayi, TW;
Inventors:
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Adjacent memory devices are electrically isolated. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.
Quick Actions:
Ou, Tien-Fan. (2011). Electrically isolated gated diode nonvolatile memory (U.S. Patent No. 7995384). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7995384
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile