The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2011

Filed:

Jul. 27, 2009
Applicants:

Takashi Hirao, Kochi, JP;

Takahiro Hiramatsu, Kochi, JP;

Mamoru Furuta, Kochi, JP;

Hiroshi Furuta, Kochi, JP;

Tokiyoshi Matsuda, Kochi, JP;

Inventors:

Takashi Hirao, Kochi, JP;

Takahiro Hiramatsu, Kochi, JP;

Mamoru Furuta, Kochi, JP;

Hiroshi Furuta, Kochi, JP;

Tokiyoshi Matsuda, Kochi, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/16 (2006.01); H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A manufacturing method of a semiconductor device includes forming an oxide semiconductor thin film layer of zinc oxide, wherein at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing dof at least 2.619 Å.


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