The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Sep. 23, 2006
Julian Blake, Gloucester, MA (US);
Jonathan England, Horsham, GB;
Scott Holden, Melrose, MA (US);
Steven R. Walther, Andover, MA (US);
Reuel Liebert, Peabody, MA (US);
Richard S. Muka, Topsfield, MA (US);
Ukyo Jeong, Eugene, OR (US);
Jinning Liu, Andover, MA (US);
Kyu-ha Shim, Andover, MA (US);
Sandeep Mehta, Boxford, MA (US);
Julian Blake, Gloucester, MA (US);
Jonathan England, Horsham, GB;
Scott Holden, Melrose, MA (US);
Steven R. Walther, Andover, MA (US);
Reuel Liebert, Peabody, MA (US);
Richard S. Muka, Topsfield, MA (US);
Ukyo Jeong, Eugene, OR (US);
Jinning Liu, Andover, MA (US);
Kyu-Ha Shim, Andover, MA (US);
Sandeep Mehta, Boxford, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.