The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2011

Filed:

Apr. 01, 2009
Applicants:

Yasuhiko Nara, Hitachinaka, JP;

Tohru Ando, Tokyo, JP;

Masahiro Sasajima, Hitachinaka, JP;

Tsutomu Saito, Hitachinaka, JP;

Tomoharu Obuki, Hitachinaka, JP;

Isamu Sekihara, Hitachinaka, JP;

Inventors:

Yasuhiko Nara, Hitachinaka, JP;

Tohru Ando, Tokyo, JP;

Masahiro Sasajima, Hitachinaka, JP;

Tsutomu Saito, Hitachinaka, JP;

Tomoharu Obuki, Hitachinaka, JP;

Isamu Sekihara, Hitachinaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.


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