The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Aug. 27, 2007
Masaru Hori, Nagoya, JP;
Toshihiko Shiozawa, Amagasaki, JP;
Yoshiro Kabe, Amagasaki, JP;
Junichi Kitagawa, Amagasaki, JP;
Masaru Hori, Nagoya, JP;
Toshihiko Shiozawa, Amagasaki, JP;
Yoshiro Kabe, Amagasaki, JP;
Junichi Kitagawa, Amagasaki, JP;
National University Corporation Nagoya University, Nagoya-shi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(D) radical density of 1×10[cm] or more generated from a process gas containing oxygen inside a process chamber of a plasma processing apparatus. During the plasma oxidation process, the O(D) radical density in the plasma is measured by a VUV monochromator, and a correction is made to the plasma process conditions.