The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Jun. 17, 2009
Han-shin Lee, Hwaseong-si, KR;
Jae-hyuck Choi, Yongin-si, KR;
Hae-young Jeong, Suwon-si, KR;
Hyung-ho Ko, Hwaseong-si, KR;
Jin-sik Jung, Seoul, KR;
Jong-keun OH, Seoul, KR;
Soo-jung Kang, Seoul, KR;
Han-shin Lee, Hwaseong-si, KR;
Jae-hyuck Choi, Yongin-si, KR;
Hae-young Jeong, Suwon-si, KR;
Hyung-ho Ko, Hwaseong-si, KR;
Jin-sik Jung, Seoul, KR;
Jong-keun Oh, Seoul, KR;
Soo-jung Kang, Seoul, KR;
Abstract
A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.