The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jun. 08, 2006
Pramod Subramonium, Tigard, OR (US);
Zhiyuan Fang, West Linn, OR (US);
Jon Henri, West Linn, OR (US);
Pramod Subramonium, Tigard, OR (US);
Zhiyuan Fang, West Linn, OR (US);
Jon Henri, West Linn, OR (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
The present invention addresses this need by providing a method for forming transparent PECVD deposited ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers. Methods of the invention involve depositing the AHM using dilute hydrocarbon precursor gas flows and/or low process temperatures. The AHMs produced are transparent (having absorption coefficients of less than 0.1 in certain embodiments). The AHMs also have the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The lower temperature process also allows reduction of the overall thermal budget for a wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile