The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Feb. 22, 2007
Pramod Subramonium, Salem, OR (US);
Yongsik Yu, Lake Oswego, OR (US);
Zhiyuan Fang, West Linn, OR (US);
Jon Henri, West Linn, OR (US);
Pramod Subramonium, Salem, OR (US);
Yongsik Yu, Lake Oswego, OR (US);
Zhiyuan Fang, West Linn, OR (US);
Jon Henri, West Linn, OR (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
The present invention provides PECVD methods for forming stable and hermetic ashable hard masks (AHMs). The methods involve depositing AHMs using dilute hydrocarbon precursor gas flows and/or high LFRF/HFRF ratios. In certain embodiments, the AHMs are transparent and have high etch selectivities. Single and dual layer hermetic AHM stacks are also provided. According to various embodiments, the dual layer stack includes an underlying AHM layer having tunable optical properties and a hermetic cap layer.