The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Mar. 01, 2004
Gi Youl Kim, San Jose, CA (US);
Anuranjan Srivastava, Sunnyvale, CA (US);
Thomas E. Seidel, Sunnyvale, CA (US);
Ana R. Londergan, Santa Clara, CA (US);
Sasangan Ramanathan, San Ramon, CA (US);
Gi Youl Kim, San Jose, CA (US);
Anuranjan Srivastava, Sunnyvale, CA (US);
Thomas E. Seidel, Sunnyvale, CA (US);
Ana R. Londergan, Santa Clara, CA (US);
Sasangan Ramanathan, San Ramon, CA (US);
Aixtron, Inc., Sunnyvale, CA (US);
Abstract
A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another.