The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2011

Filed:

Oct. 22, 2007
Applicants:

Zhendong Liu, Newark, DE (US);

Ross E. Barker, Ii, Middletown, DE (US);

Inventors:

Zhendong Liu, Newark, DE (US);

Ross E. Barker, II, Middletown, DE (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 13/00 (2006.01); C09K 13/04 (2006.01); C09K 13/06 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

The polishing method uses a polishing solution for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisting of nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid for adjusting a pH level of the polishing solution to less than 3, at least 0.0025 benzotriazole inhibitor for reducing removal rate of the interconnect metals, 0 to 10 surfactant, 0.01 to 10 colloidal silica having an average particle size of less than 50 nm and balance water and incidental impurities. The polishing solution has a tantalum nitride material to copper selectivity of at least 3 to 1 and a tantalum nitride to TEOS selectivity of at least 3 to 1.


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