The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Dec. 18, 2006
Yu-tsung Lai, Tai-Chung Hsien, TW;
Chun-jen Huang, Tainan Hsien, TW;
Jyh-cherng Yau, Tai-Nan, TW;
Jiunn-hsiung Liao, Tainan Hsien, TW;
Yu-Tsung Lai, Tai-Chung Hsien, TW;
Chun-Jen Huang, Tainan Hsien, TW;
Jyh-Cherng Yau, Tai-Nan, TW;
Jiunn-Hsiung Liao, Tainan Hsien, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
Disclosed is a semiconductor manufacturing process, in which a fluorine radical-containing plasma is used to etch a hard mask and a layer therebeneath; and a treatment is carried out using a gas reactive to fluorine radicals for reacting with residual fluorine radicals to form a fluorine-containing compound and remove it. Thus, precipitates formed by the reaction of fluorine radicals and titanium components existing in the hard mask to cause a process defect can be avoided.