The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Oct. 16, 2007
Brian H. Burrows, San Jose, CA (US);
Alexander Tam, Union City, CA (US);
Ronald Stevens, San Ramon, CA (US);
Kenric T. Choi, Santa Clara, CA (US);
James D. Felsch, Santa Clara, CA (US);
Jacob Grayson, Santa Clara, CA (US);
Sumedh Acharya, Santa Clara, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Lori D. Washington, Union City, CA (US);
Nyi O. Myo, San Jose, CA (US);
Brian H. Burrows, San Jose, CA (US);
Alexander Tam, Union City, CA (US);
Ronald Stevens, San Ramon, CA (US);
Kenric T. Choi, Santa Clara, CA (US);
James D. Felsch, Santa Clara, CA (US);
Jacob Grayson, Santa Clara, CA (US);
Sumedh Acharya, Santa Clara, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Lori D. Washington, Union City, CA (US);
Nyi O. Myo, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.