The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Jul. 19, 2007
Yasuhisa Kitahata, Tokyo-to, JP;
Yasutaka Morikawa, Tokyo-to, JP;
Takashi Adachi, Tokyo-to, JP;
Nobuhito Toyama, Tokyo-to, JP;
Yuichi Inazuki, Tokyo-to, JP;
Takanori Sutou, Tokyo-to, JP;
Yasuhisa Kitahata, Tokyo-to, JP;
Yasutaka Morikawa, Tokyo-to, JP;
Takashi Adachi, Tokyo-to, JP;
Nobuhito Toyama, Tokyo-to, JP;
Yuichi Inazuki, Tokyo-to, JP;
Takanori Sutou, Tokyo-to, JP;
Dai Nippon Printing Co., Ltd., Tokyo-to, JP;
Abstract
A photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens. The photomask includes a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further, given that a thickness of the light shielding film or semi-transparent film is 't' nm, a refractive index is 'n', an extinction factor is “k”, and a bias of a space part of the mask pattern is “d” nm, when “t”, “d”, “n” and “k” are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580.