The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Mar. 30, 2008
Tianniu Chen, Rocky Hill, CT (US);
Chongying Xu, New Milford, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Bryan C. Hendrix, Danbury, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Juan E. Dominguez, Hillsboro, OR (US);
Adrien R. Lavoie, Beaverton, OR (US);
Harsono S. Simka, Saratoga, CA (US);
Tianniu Chen, Rocky Hill, CT (US);
Chongying Xu, New Milford, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Bryan C. Hendrix, Danbury, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Juan E. Dominguez, Hillsboro, OR (US);
Adrien R. Lavoie, Beaverton, OR (US);
Harsono S. Simka, Saratoga, CA (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).