The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Aug. 28, 2007
Kazuhide Hasebe, Nirasaki, JP;
Pao-hwa Chou, Nirasaki, JP;
Kota Umezawa, Nirasaki, JP;
Kentaro Kadonaga, Nirasaki, JP;
Hao-hsiang Chang, Hsin-chu, TW;
Kazuhide Hasebe, Nirasaki, JP;
Pao-Hwa Chou, Nirasaki, JP;
Kota Umezawa, Nirasaki, JP;
Kentaro Kadonaga, Nirasaki, JP;
Hao-Hsiang Chang, Hsin-chu, TW;
Tokyo Electron Limited, Tokyo, JP;
Abstract
An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.