The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Jun. 04, 2009
Chin Kun Lan, Hsinchu, TW;
Sheng-wen Chen, Shinjuang, TW;
Hung Jui Chang, Shetou Township, Changhua County, TW;
Yu-ku Lin, Tainan, TW;
Ying-lang Wang, Taichung County, TW;
Chin Kun Lan, Hsinchu, TW;
Sheng-Wen Chen, Shinjuang, TW;
Hung Jui Chang, Shetou Township, Changhua County, TW;
Yu-Ku Lin, Tainan, TW;
Ying-Lang Wang, Taichung County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method including providing a semiconductor substrate in a reaction chamber; flowing a first reactant including silicon and oxygen, a boron dopant and a phosphorus dopant into the reaction chamber so that a layer of BPTEOS is deposited on the semiconductor substrate; stopping the flow of the first reactant, boron dopant and phosphorus dopant into the reaction chamber and so that a phosphorus dopant and boron dopant rich film is deposited over the layer of BPTEOS; and reducing the film comprising exposing the film to an Oplasma.