The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2011

Filed:

Oct. 24, 2006
Applicants:

Ching-ya Wang, Hsin-Chu, TW;

Weng-jin Wu, Hsinchu, TW;

Henry Lo, Hsinchu, TW;

Jean Wang, Hsin Chu, TW;

Inventors:

Ching-Ya Wang, Hsin-Chu, TW;

Weng-Jin Wu, Hsinchu, TW;

Henry Lo, Hsinchu, TW;

Jean Wang, Hsin Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and apparatus involve providing a substrate having a dielectric layer formed thereon, forming a photoresist mask over the dielectric layer, the photoresist mask defining an opening, etching the dielectric layer through the at least one opening in the photoresist mask, treating a portion of the photoresist mask with an etching species, and removing the treated photoresist mask with a supercritical fluid. The etching, treating, and removing can be performed in one chamber.


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