The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Aug. 30, 2007
Wei Liu, Santa Clara, CA (US);
Shifang LI, Pleasanton, CA (US);
Weidong Yang, Milpitas, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Provided is a method for determining one or more profile parameters of a structure using an optical metrology model, the optical metrology model including a profile model, an approximation diffraction model, and a fine diffraction model. A simulated approximation diffraction signal is generated based on an approximation diffraction model of the structure. A set of difference diffraction signals is obtained by subtracting the simulated approximation diffraction signal from each of simulated fine diffraction signals and paired with the corresponding profile parameters. A machine learning system is trained using the pairs of difference diffraction signal and corresponding profile parameters. A measured diffraction signal adjusted by the simulated approximation diffraction signal is input into the trained machine learning system and generates the corresponding profile parameters.