The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Jul. 09, 2008
Dustin W. Ho, Fremont, CA (US);
Juan Carlos Rocha-alvarez, Sunnyvale, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Kelvin Chan, Santa Clara, CA (US);
Nagarajan Rajagopalan, Santa Clara, CA (US);
Visweswaren Sivaramakrishnan, Cupertino, CA (US);
Dustin W. Ho, Fremont, CA (US);
Juan Carlos Rocha-Alvarez, Sunnyvale, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Kelvin Chan, Santa Clara, CA (US);
Nagarajan Rajagopalan, Santa Clara, CA (US);
Visweswaren Sivaramakrishnan, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.