The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Oct. 21, 2009
Jiong-ping LU, Richardson, TX (US);
Yaw S. Obeng, Frisco, TX (US);
Ping Jiang, Plano, TX (US);
Joe G. Tran, Flower Mound, TX (US);
Jiong-Ping Lu, Richardson, TX (US);
Yaw S. Obeng, Frisco, TX (US);
Ping Jiang, Plano, TX (US);
Joe G. Tran, Flower Mound, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for making a transistorthat includes using a transition metal nitride layerand/or a SOG layerto protect the source/drain regionsfrom silicidation during the silicidation of the gate electrode. The SOG layeris planarized to expose the transition metal nitride layeror the gate electrodebefore the gate silicidation process. If a transition metal nitride layeris used, then it is removed from the top of the gate electrodebefore the full silicidation of the gate electrode