The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Mar. 31, 2008
Giuseppe Curello, Portland, OR (US);
Ian R. Post, Portland, OR (US);
Nick Lindert, Beaverton, OR (US);
Walid M. Hafez, Portland, OR (US);
Chia-hong Jan, Portland, OR (US);
Mark T. Bohr, Aloha, OR (US);
Giuseppe Curello, Portland, OR (US);
Ian R. Post, Portland, OR (US);
Nick Lindert, Beaverton, OR (US);
Walid M. Hafez, Portland, OR (US);
Chia-Hong Jan, Portland, OR (US);
Mark T. Bohr, Aloha, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.