The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Nov. 29, 2007
Nitin K. Ingle, Santa Clara, CA (US);
Jing Tang, Santa Clara, CA (US);
Yi Zheng, San Jose, CA (US);
Zheng Yuan, Fremont, CA (US);
Zhenbin GE, San Jose, CA (US);
Xinliang LU, Fremont, CA (US);
Chien-teh Kao, Sunnyvale, CA (US);
Vikash Banthia, Mountain View, CA (US);
William H. Mcclintock, Los Altos, CA (US);
Mei Chang, Saratoga, CA (US);
Nitin K. Ingle, Santa Clara, CA (US);
Jing Tang, Santa Clara, CA (US);
Yi Zheng, San Jose, CA (US);
Zheng Yuan, Fremont, CA (US);
Zhenbin Ge, San Jose, CA (US);
Xinliang Lu, Fremont, CA (US);
Chien-Teh Kao, Sunnyvale, CA (US);
Vikash Banthia, Mountain View, CA (US);
William H. McClintock, Los Altos, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.