The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2011

Filed:

Feb. 05, 2009
Applicants:

Jong Ho Yang, SeongNam, KR;

Jin-ping Han, Fishkill, NY (US);

Chung Woh Lai, Singapore, SG;

Henry Utomo, Newburgh, NY (US);

Inventors:

Jong Ho Yang, SeongNam, KR;

Jin-Ping Han, Fishkill, NY (US);

Chung Woh Lai, Singapore, SG;

Henry Utomo, Newburgh, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of the present disclosure provide stress optimization during manufacturing of dual embedded epitaxially grown (EPI) semiconductor structures using just two masks, such as nFET and pFET open for embedded epitaxial using SiC and SiGe, and separated halo implantation masks for both horizontal and vertical PC


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