The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
May. 12, 2009
Ming-tzong Yang, Hsinchu County, TW;
Ching-chung Ko, Hsinchu County, TW;
Tung-hsing Lee, Taipei County, TW;
Zheng Zeng, Fremont, CA (US);
Ming-Tzong Yang, Hsinchu County, TW;
Ching-Chung Ko, Hsinchu County, TW;
Tung-Hsing Lee, Taipei County, TW;
Zheng Zeng, Fremont, CA (US);
Mediatek Inc., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region surrounding the base region with an offset between an edge of the gate and the collector region; a lightly doped drain region between the edge of the gate and the collector region; a salicide block layer disposed on or over the lightly doped drain region; and a collector salicide formed on at least a portion of the collector region.