The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2011

Filed:

Sep. 27, 2007
Applicants:

Toshihiko Shiozawa, Amagasaki, JP;

Yoshiro Kabe, Amagasaki, JP;

Takashi Kobayashi, Amagasaki, JP;

Hikaru Adachi, Amagasaki, JP;

Junichi Kitagawa, Amagasaki, JP;

Nobuhiko Yamamoto, Amagasaki, JP;

Inventors:

Toshihiko Shiozawa, Amagasaki, JP;

Yoshiro Kabe, Amagasaki, JP;

Takashi Kobayashi, Amagasaki, JP;

Hikaru Adachi, Amagasaki, JP;

Junichi Kitagawa, Amagasaki, JP;

Nobuhiko Yamamoto, Amagasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.


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