The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2011

Filed:

Feb. 26, 2008
Applicants:

Sayaka Tanimoto, Kodaira, JP;

Hiroya Ohta, Kokubunji, JP;

Hiroshi Makino, Kokobunji, JP;

Ryuichi Funatsu, Hitachinaka, JP;

Inventors:

Sayaka Tanimoto, Kodaira, JP;

Hiroya Ohta, Kokubunji, JP;

Hiroshi Makino, Kokobunji, JP;

Ryuichi Funatsu, Hitachinaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/225 (2006.01); H01J 49/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.


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