The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7906252 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 15, 2011

Filed:

Mar. 06, 2006
Applicants:

Hsin-chang Lee, Hsin-Chu, TW;

Chia-jen Chen, Banciao, TW;

Hong-chang Hsieh, Hsin-Chu, TW;

Lee-chih Yeh, Keelung, TW;

Inventors:

Hsin-Chang Lee, Hsin-Chu, TW;

Chia-Jen Chen, Banciao, TW;

Hong-Chang Hsieh, Hsin-Chu, TW;

Lee-Chih Yeh, Keelung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A PSM blank and method for forming a PSM using the PSM blank, the PSM blank including a light transmitting portion; an uppermost anti-reflection portion; a photosensitive layer stack on the anti-reflection portion comprising at least two photosensitive layers; wherein each photosensitive layer has a lower radiant energy exposure sensitivity compared to an underlying layer.


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Lee, Hsin-Chang. (2011). Multiple resist layer phase shift mask (psm) blank and psm formation method (U.S. Patent No. 7906252). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7906252

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