The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Apr. 07, 2009
Ming-tzong Yang, Hsinchu County, TW;
Tao Cheng, Hsinchu, TW;
Ching-chung Ko, Hsinchu County, TW;
Tung-hsing Lee, Taipei County, TW;
Ming-Tzong Yang, Hsinchu County, TW;
Tao Cheng, Hsinchu, TW;
Ching-Chung Ko, Hsinchu County, TW;
Tung-Hsing Lee, Taipei County, TW;
Mediatek Inc., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A lateral bipolar junction transistor formed in a semiconductor substrate includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region having at least one open side and being disposed about a periphery of the base region; a shallow trench isolation (STI) region disposed about a periphery of the collector region; a base contact region disposed about a periphery of the STI region; and an extension region merging with the base contact region and laterally extending to the gate on the open side of the collector region.