The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
May. 20, 2008
Maciej Wiatr, Dresden, DE;
Casey Scott, Dresden, DE;
Andreas Gehring, Dresden, DE;
Peter Javorka, Radeburg, DE;
Andy Wei, Dresden, DE;
Maciej Wiatr, Dresden, DE;
Casey Scott, Dresden, DE;
Andreas Gehring, Dresden, DE;
Peter Javorka, Radeburg, DE;
Andy Wei, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
By selectively applying a stress memorization technique to N-channel transistors, a significant improvement of transistor performance may be achieved. High selectivity in applying the stress memorization approach may be accomplished by substantially maintaining the crystalline state of the P-channel transistors while annealing the N-channel transistors in the presence of an appropriate material layer which may not to be patterned prior to the anneal process, thereby avoiding additional lithography and masking steps.