The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Aug. 09, 2007
Kuo-chi Tu, Hsin-Chu, TW;
Kuo-chyuan Tzeng, Chu-Pei, TW;
Chung-yi Chen, Hsin-Chu, TW;
Jian-yu Shen, Huwei, TW;
Chun-yao Chen, Hsin-Chu, TW;
Hsiang-fan Lee, Hsin-Chu, TW;
Kuo-Chi Tu, Hsin-Chu, TW;
Kuo-Chyuan Tzeng, Chu-Pei, TW;
Chung-Yi Chen, Hsin-Chu, TW;
Jian-Yu Shen, Huwei, TW;
Chun-Yao Chen, Hsin-Chu, TW;
Hsiang-Fan Lee, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric material as a capacitor dielectric of the MIM capacitor embedded isolation structure.