The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Mar. 06, 2007
Akinori Kitamura, Nirasaki, JP;
Masanobu Honda, Nirasaki, JP;
Nozomi Hirai, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma etching method includes the step of performing a plasma etching on a silicon-containing dielectric layer formed on a substrate to be processed by using a plasma, while using an organic layer as a mask. In addition, the plasma is generated from a processing gas at least including a first fluorocarbon gas which is an unsaturated gas; a second fluorocarbon gas which is an aliphatic saturated gas expressed by CF(m=5, 6); and an oxygen gas. Further, a computer-readable storage medium for storing therein a computer executable control program is provided where the control program, when executed, controls a plasma etching apparatus to perform the above plasma etching method.