The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Jun. 29, 2007
Dong-won Hwang, Gyeonggi-do, KR;
Kook-joo Kim, Seoul, KR;
Jung-in LA, Chungcheongnam-do, KR;
Pil-kwon Jun, Gyeonggi-do, KR;
Seung-ki Chae, Seoul, KR;
Yang-koo Lee, Gyeonggi-do, KR;
Dong-Won Hwang, Gyeonggi-do, KR;
Kook-Joo Kim, Seoul, KR;
Jung-In La, Chungcheongnam-do, KR;
Pil-Kwon Jun, Gyeonggi-do, KR;
Seung-Ki Chae, Seoul, KR;
Yang-Koo Lee, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Cheil Industries, Inc., Gyeonggi-do, KR;
Abstract
In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.