Chungcheongnam-do, South Korea

Jung-In La

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Innovations by Jung-In La: A Look into His Patents and Career

Introduction: Jung-In La is a notable inventor based in Chungcheongnam-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent concerning silicon oxide etching.

Latest Patents: Jung-In La holds a patent titled "Composition for etching silicon oxide and method of forming a contact hole using the same." This invention describes a specialized composition for etching silicon oxide, which includes ammonium bifluoride, organic acids, inorganic acids, and low polar organic solvents. The innovative process aims to minimize damage to metal silicide patterns during the etching process essential for forming contact holes in semiconductor devices.

Career Highlights: Throughout his career, Jung-In La has been associated with renowned companies such as Samsung Electronics Co., Ltd. and Cheil Industries Inc. His work in these organizations has contributed significantly to advancements in semiconductor manufacturing and materials science.

Collaborations: Jung-In La has collaborated with prominent professionals in the field, including Dong-Won Hwang and Kook-Joo Kim. These partnerships have fostered innovative solutions and methodologies within the semiconductor industry.

Conclusion: Jung-In La's inventive contributions, particularly his patent on silicon oxide etching, reflect his expertise and commitment to advancing semiconductor technologies. His collaboration with esteemed colleagues and work with major corporations highlight the impact of his innovations on the industry.

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