The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2011

Filed:

Jan. 12, 2007
Applicants:

Mehran Naser-ghodsi, Hamilton, MA (US);

Garrett Pickard, Mountain View, CA (US);

Rudy F. Garcia, Union City, CA (US);

Tzu-chin Chuang, Cupertino, CA (US);

Ming Lun Yu, Fremont, CA (US);

Kenneth Krzeczowski, Scotts Valley, CA (US);

Matthew Lent, Livermore, CA (US);

Sergey Lopatin, Morgan Hill, CA (US);

Chris Huang, Cupertino, CA (US);

Niles K. Macdonald, San Jose, CA (US);

Inventors:

Mehran Naser-Ghodsi, Hamilton, MA (US);

Garrett Pickard, Mountain View, CA (US);

Rudy F. Garcia, Union City, CA (US);

Tzu-Chin Chuang, Cupertino, CA (US);

Ming Lun Yu, Fremont, CA (US);

Kenneth Krzeczowski, Scotts Valley, CA (US);

Matthew Lent, Livermore, CA (US);

Sergey Lopatin, Morgan Hill, CA (US);

Chris Huang, Cupertino, CA (US);

Niles K. MacDonald, San Jose, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.


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