The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Jul. 17, 2007
Aaron R. Wilson, Boise, ID (US);
Larson Lindholm, Boise, ID (US);
David Hwang, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Fin-FET (fin field effect transistor) devices and methods of fabrication are disclosed. The Fin-FET devices include dual fin structures that may form a channel region between a source region and a drain region. In some embodiments, the dual fin structures are formed by forming shallow trench isolation structures, using a pair of shallow trench isolation (STI) structures as a mask to define a recess in a portion of the substrate between the pair of STI structures, and recessing the STI structures so that the resulting dual fin structure protrudes from an active surface of the substrate. The dual fin structure may be used to form single-gate, double-gate or triple-gate fin-FET devices. Electronic systems including such fin-FET devices are also disclosed.