The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Jun. 02, 2004
Ziwei Fang, Beverly, MA (US);
Sung-cheon Ko, Lexington, MA (US);
Edmund J. Winder, Waltham, MA (US);
Daniel Distaso, Merrimac, MA (US);
Ludovic Godet, Treize Vents, FR;
Bon Woong Koo, Andover, MA (US);
Jay T. Scheuer, Rowley, MA (US);
Ziwei Fang, Beverly, MA (US);
Sung-Cheon Ko, Lexington, MA (US);
Edmund J. Winder, Waltham, MA (US);
Daniel Distaso, Merrimac, MA (US);
Ludovic Godet, Treize Vents, FR;
Bon Woong Koo, Andover, MA (US);
Jay T. Scheuer, Rowley, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.